Key Responsibilities
- Develop and optimize GaN-based semiconductor fabrication processes
- Operate and maintain MOCVD and epitaxy equipment for GaN growth
- Characterize material properties and device performance
- Troubleshoot process deviations and implement corrective actions
- Collaborate with cross-functional teams to improve yield and performance
- Document process parameters and maintain compliance with industry standards
Requirements
- Bachelor's or Master's in Electrical Engineering, Materials Science, or related field
- 3+ years of experience in GaN process development or fabrication
- Hands-on experience with MOCVD, epitaxy, and semiconductor characterization tools
- Knowledge of GaN device physics and fabrication challenges
- Strong analytical and problem-solving skills